Effects of Heavy Doping and Impurity Size on MinorityCarrier Transport Parameters in Heavily (Lightly) Doped p^+ (n)Type Crystalline Silicon at 300 K, Applied to Determine the Performance of p^+n Junction Solar Cells
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Author(s)
H. Van Cong, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F66 860 Perpignan, France
P. Blaise, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F66 860 Perpignan, France
O. HenriRousseau, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F66 860 Perpignan, France
Abstract
The effects of heavy doping and acceptor (donor) size on the electron (hole)minority saturation current density J_Eo (J_Bo ), injected respectively into the heavily (lightly) doped crystalline silicon (Si) emitter (base) region of p^+n junction, which can be applied to determine the performance of solar cells, being strongly affected by the dark saturation current density: J_o≡J_Eo+J_Bo, were investigated. For that, we used an effective Gaussian acceptordensity profile to determine J_Eo, and an empirical method of two points to investigate the ideality factor n, short circuit current density J_sc, fill factor (FF), and photovoltaic conversion efficiency η, expressed as functions of the open circuit voltage V_oc, giving rise to a satisfactory description of our obtained results, being compared also with other existing theoreticalandexperimental ones. In particular, the highest ηvalue, obtained in the present paper is equal to: η(present)=27.56%, given in the condition of completely opaque and heavily doped (TlSi) emitterandlightly doped (SSi) base regions, with the intrinsic band gap, E_gi (r_Tl )=1.34 eV, where r_Tl is the Tlatom radius, while in our previous paper we got: η(previous)=31.55%, obtained in the condition of completely opaque and heavily doped (SSi) emitterandlightly doped (TlSi) base regions, with E_gi (r_S )=1.70 eV>E_gi (r_Tl )=1.34 eV, where r_S is the Satom radius. That is due to the impuritysize effect, because of r_S>r_Tl. Those results can be compared with a wellknown highest ηvalue, obtained by Richter et al. (R), η(R)=29.43%, as: η(present)=27.56%<η(R)=29.43%<η(previous)=31.55%.
Keywords
donor (acceptor)size effect; heavily doped emitter region; ideality factor; open circuit voltage; photovoltaic conversion efficiency
Cite this paper
H. Van Cong,
P. Blaise,
O. HenriRousseau,
Effects of Heavy Doping and Impurity Size on MinorityCarrier Transport Parameters in Heavily (Lightly) Doped p^+ (n)Type Crystalline Silicon at 300 K, Applied to Determine the Performance of p^+n Junction Solar Cells, SCIREA Journal of Physics. Vol.
4
, No.
5
,
2019
, pp.
126

162
.
References
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