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Home > Journals > SCIREA Journal of Physics > Archive > Paper Information

Effects of Heavy Doping and Impurity Size on Minority-Carrier Transport Parameters in Heavily (Lightly) Doped p^+ (n)-Type Crystalline Silicon at 300 K, Applied to Determine the Performance of p^+-n Junction Solar Cells

Volume 4, Issue 5, October 2019    |    PP. 126-162    |PDF (982 K)|    Pub. Date: August 10, 2019
39 Downloads     7389 Views  

Author(s)
H. Van Cong, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France
P. Blaise, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France
O. Henri-Rousseau, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France

Abstract
The effects of heavy doping and acceptor (donor) size on the electron (hole)-minority saturation current density J_Eo (J_Bo ), injected respectively into the heavily (lightly) doped crystalline silicon (Si) emitter (base) region of p^+-n junction, which can be applied to determine the performance of solar cells, being strongly affected by the dark saturation current density: J_o≡J_Eo+J_Bo, were investigated. For that, we used an effective Gaussian acceptor-density profile to determine J_Eo, and an empirical method of two points to investigate the ideality factor n, short circuit current density J_sc, fill factor (FF), and photovoltaic conversion efficiency η, expressed as functions of the open circuit voltage V_oc, giving rise to a satisfactory description of our obtained results, being compared also with other existing theoretical-and-experimental ones. In particular, the highest η-value, obtained in the present paper is equal to: η(present)=27.56%, given in the condition of completely opaque and heavily doped (Tl-Si) emitter-and-lightly doped (S-Si) base regions, with the intrinsic band gap, E_gi (r_Tl )=1.34 eV, where r_Tl is the Tl-atom radius, while in our previous paper we got: η(previous)=31.55%, obtained in the condition of completely opaque and heavily doped (S-Si) emitter-and-lightly doped (Tl-Si) base regions, with E_gi (r_S )=1.70 eV>E_gi (r_Tl )=1.34 eV, where r_S is the S-atom radius. That is due to the impurity-size effect, because of r_S>r_Tl. Those results can be compared with a well-known highest η-value, obtained by Richter et al. (R), η(R)=29.43%, as: η(present)=27.56%<η(R)=29.43%<η(previous)=31.55%.

Keywords
donor (acceptor)-size effect; heavily doped emitter region; ideality factor; open circuit voltage; photovoltaic conversion efficiency

Cite this paper
H. Van Cong, P. Blaise, O. Henri-Rousseau, Effects of Heavy Doping and Impurity Size on Minority-Carrier Transport Parameters in Heavily (Lightly) Doped p^+ (n)-Type Crystalline Silicon at 300 K, Applied to Determine the Performance of p^+-n Junction Solar Cells, SCIREA Journal of Physics. Vol. 4 , No. 5 , 2019 , pp. 126 - 162 .

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